A Broadband Reconfigurable Frequency-Selective Surface in Terahertz Band Based on Different Metal-Insulator Transition Temperature of VO<sub>2</sub>

A Compressible Reconfigurable Frequency Selective Surface

Reconfigurable electronics based on metal-insulator transition: steep-slope switches and high frequency functions enabled by Vanadium Dioxide

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting impact over the next decades, providing breakthroughs in all scientific domains addressing the main challenges faced by the world today, inc...

Broadband monolithic extractor for metal-metal waveguide based terahertz quantum cascade laser frequency combs

We present a monolithic solution to extract efficiently light from terahertz quantum cascade lasers with metal-metal waveguides suitable for broadband frequency comb applications. The design is optimized for a bandwidth of 500 GHz around a center frequency of 2.6 THz. A five-fold increase in total output power is observed compared to standard metal-metal waveguides. The extractor features a sin...

Design and Simulation of a Metal-Insulator-Metal Filter Based on Plasmonic Split Ring

In this paper, a plasmonic filter made of a split ring, two U-shaped structures and two straight waveguides is designed and investigated. In the proposed structure, the split ring and U-shaped structures are situated between straight waveguides. Simulations are done based on FDTD method. Split ring, U-shaped structures and straight waveguides are made of air in the silver background. In the pro...

Surface States, Surface Metal-Insulator, and Surface Insulator-Metal Transitions ∗

I present an informal discussion of various cases where two-dimensional surface metal-insulator structural and charge-density-wave instabilities driven by partly filled surface states have been advocated. These include reconstructions of clean semiconductor surfaces and of W(100) and Mo(100), as well as anomalies on the hydrogen-covered surfaces H/W(110) and H/Mo(110), and possibly alkali-cover...